Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

Characterization of GaAs grown by molecular beam epitaxy on vicinal Ge„100... substrates

In this article we investigate the growth of GaAs on two different vicinal surfaces of Ge ~100!, cut 6° off the ~100! plane toward the ~110! plane or toward the ~111! plane. Both substrates exhibit evidence of a regular array of double steps. Ge substrates and GaAs films are characterized with low energy electron diffraction, low temperature photoluminescence, scanning tunneling microscopy, ele...

Ge films grown on Si substrates by molecular - beam epitaxy below 450 ° C

Ge thin films are grown on Si~001! substrates by molecular-beam epitaxy at 370 °C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 °C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be a...

Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si „100..

Visible electroluminescence ~EL! is observed at room temperature by current injection into Eu:CaF2 layers containing 7.5 and 8.0 at. % Eu grown by molecular beam epitaxy on lightly doped ~100! p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped sample...

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffracti...